MUEGGE is a leading supplier of scalable plasma technology for Photovoltaic, Flat Panel Display and Semiconductor applications as well as Remote Plasma Source (RPS) applications in the Semiconductor and MEMS markets. MUEGGE has a strong experience in Strip/Removal tools which enable a fast dry etch process for SU-8, KMPR and PMMA. This is a key process technology for Semiconductor and MEMS fabrication. Further examples of MUEGGE`s stripping applications are in the "Semiconductor Backend" area as Stress Relief Etching after Grinding and Recess Etching for the Through Silicon Via Technology (3D integration). In the "Semiconductor Frontend" MUEGGE offers a Remote Plasma Source for isotropic etching of Silicon and Silicon compounds, as well as scalable plasma arrays for plasma enhanced deposition and chamber cleaning.
The RPS is a complete microwave plasma subsystem designed for easy turnkey integration. It offers a reliable solution for fluorine and non-fluorine chemistries covering a wide process range of gases, gas-flow, pressure and power. Delivering a flow of uncharged atomic species (radicals), it is the ideal remote plasma source for a large variety of applications, ranging from fast PR- and polymer-removal to isotropic etching and CVD.
The plasma array is a low-pressure plasma source, it can be used for plasma-supported surface treatments, such as surface activation, etching or depositions. It is a direct microwave plasma source without use of a magnetic field.
The array system is designed for use on vacuum process chambers.
Typical applications for the array system are:
• Isotropic etching
• Plasma-supported depositions
• Stripping photoresist
• Service cleaning and service conditioning
The MUEGGE STP microwave plasma systems are ideal for photoresist ashing (perfect for SU-8), descum, wafer cleaning, surface activation and silicon and silicon nitride etching.
The MUEGGE STP series has successfully integrated a plasma process and system technology to remove SU-8 with dry plasma etching. Also for removing sacrificial layers, the isotropic etch property of microwave plasma is of advantage to undercut the top layer.